| 摘要 |
PROBLEM TO BE SOLVED: To constitute a light-emitting section having P-N junction type heterojunction structure without requiring a complicated process by containing a barrier layer composed of an N-type group III nitride semiconductor, a light- emitting layer comprising an indium-containing III nitride semiconductor and a P-type layer consisting of an oxide as the light-emitting section. SOLUTION: A blue LED 10 is constituted of a laminated structure 20, having a transparent P-type conductive oxide layer functioning as a P-type barrier layer, a P-type window layer and a P-type electrode layer in combination. The laminated structure 20 is composed of an Sb-doped N-type Si single-crystal substrate 101 and an N-type buffer layer 103 comprising a polycrystalline N-type first buffer layer 102a, using zinc blende type cubic boron phosphide (BP) as the main body and an N-type second buffer layer 102b, using cubic BP as the main body. The light-emitting device is configured of an N-type light-emitting layer 104, having polyphase structure using a gallium-indium mixed crystal, in which main body phase S is formed of N-type GaN and an indium composition ratio is set to 0.1, as slave phase T, an undoped N-type protective layer 105 and a transparent P-type conductive layer 106 composed of CuAlO2. |
