发明名称 |
HOT WALL RAPID THERMAL PROCESSOR |
摘要 |
An apparatus (10) for heat treatment of a wafer (28) is disclosed. The apparatus includes a heating chamber (18) having a heat source (20). A cooling chamber (32) is positioned adjacent to the heating chamber and includes a cooling source (40). A wafer holder (38) is configured to move between the cooling chamber and the heating chamber through a passageway (54) and one or more shutters (52) defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.
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申请公布号 |
WO0113054(A1) |
申请公布日期 |
2001.02.22 |
申请号 |
WO2000US22202 |
申请日期 |
2000.08.11 |
申请人 |
SILICON VALLEY GROUP, INC. |
发明人 |
RATLIFF, CHRISTOPHER, T.;KOWALSKI, JEFFREY, M.;QIU, TAIQING |
分类号 |
F27D3/12;C23C16/455;C23C16/458;C30B25/10;C30B25/14;F27B5/06;F27B5/14;F27B5/16;F27D1/18;F27D3/00;F27D7/02;F27D9/00;H01L21/00;H01L21/205;H01L21/324;(IPC1-7):F27B5/14 |
主分类号 |
F27D3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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