| 摘要 |
A semiconductor device has electrostatic protection device capable of preventing characteristic fluctuation of MOS transistor caused by electrostatic discharge. PN junction is formed in between N+ cathode region and boron upward diffusion region of P+ substrate, thus being formed low breakdown voltage diode whose breakdown occurs at low reverse voltage. The diode is in use as electrostatic protection device of either input circuit or output circuit so that it is capable of protecting internal device transistor efficiently from applied surge when gate oxide film becomes thin film.
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