发明名称 |
Polishing process for manufacturing dopant-striation-free polished silicon wafers |
摘要 |
A multi-step polishing process for producing dopant-striation-free semiconductor wafers. The process includes polishing a surface of the wafer using a sodium stabilized colloidal silica slurry, an amine accelerant, and an alkaline etchant, polishing the surface of the wafer using a sodium stabilized colloidal silica slurry and an alkaline etchant which is substantially free of amine accelerants, and polishing the surface of the wafer using an ammonia stabilized colloidal silica slurry and an alkaline etchant which is substantially free of amine accelerants.
|
申请公布号 |
US6189546(B1) |
申请公布日期 |
2001.02.20 |
申请号 |
US19990473669 |
申请日期 |
1999.12.29 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
ZHANG DAVID;BRUMER SHARON;ERK HENRY F. |
分类号 |
C09G1/02;C09K3/14;H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
C09G1/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|