| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing composite that is superior in stability and durability of polishing power and does not harm working environment in a method for mirror polishing the edge of a compound semiconductor wafer. SOLUTION: The edge of a compound semiconductor wafer is mirror-polished by pressing the edge part of a compound semiconductor wafer to a drum of a polishing machine, having a drum with a polishing pad adhered on its surface, and rotating both the compound semiconductor wafer and the drum, while supplying a polishing composite. In this case, the polishing composite contains a peroxide compound or a peroxoacid compound, a water-soluble amine, and colloidal silicon-oxide particles, and yields a pH value in the range of 7.0-0.5.</p> |
