发明名称 Normally conducting dual thyristor
摘要 The present invention relates to a component forming a normally on dual thyristor, which can be turned off by a voltage pulse on the control electrode, including a thyristor, a first depletion MOS transistor, the gate of which is connected to the source, connected between the anode gate and the cathode of the thyristor, and a second enhancement MOS transistor, the gate of which is connected to a control terminal.
申请公布号 US6188267(B1) 申请公布日期 2001.02.13
申请号 US19990091135 申请日期 1999.04.15
申请人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 发明人 SANCHEZ JEAN-LOUIS;JALADE JEAN;LAUR JEAN-PIERRE;FOCH HENRI
分类号 H01L29/744;H01L29/74;H01L29/745;H01L29/749;(IPC1-7):H03K17/72 主分类号 H01L29/744
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