发明名称 |
Method of manufacturing semiconductor device |
摘要 |
In a method of manufacturing a semiconductor device in which a capacitor having a storage electrode is formed on a semiconductor substrate, silicon films are formed on the semiconductor substrate and at the same time first and second endpoint marker layers for dividing the silicon films into three parts in the direction of thickness are formed by using a material different from the material of the silicon films. The silicon films including the first and second endpoint marker layers are etched. The etching depth of the silicon films is controlled based on the type of etched material, thereby forming the storage electrode.
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申请公布号 |
US6187623(B1) |
申请公布日期 |
2001.02.13 |
申请号 |
US19980187488 |
申请日期 |
1998.11.06 |
申请人 |
NEC CORPORATION |
发明人 |
HIROTA TOSHIYUKI;OKAMURA KENJI;SATO FUMIHIDE |
分类号 |
H01L21/302;H01L21/02;H01L21/3065;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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