| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the opening rate of a pixel by arranging at least one portion of a semiconductor layer for forming a transistor and a matrix-shaped pixel electrode so that they overlap each other flatly in an active matrix substrate. SOLUTION: A pixel electrode 9a is provided on an active matrix substrate 100, a predetermined alignment layer treatment such as rubbing treatment is performed to the upper side, thus providing an alignment layer 16. An opposing common electrode 32 is provided over the entire surface of an opposing substrate 200, and an alignment layer 23 that is subjected to such predetermined alignment layer treatment as rubbing treatment is provided at the lower side. A switching element (FTF) 50 that is connected to a plurality of scanning lines and a plurality of data lines that cross each other and a pixel electrode 9a that is connected to the element 50 are composed in a matrix on an insulation substrate. Two gate electrodes 3a of TFT 50 for switching pixels are arranged between source and drain regions 1d and 1e as dual gate structure. Therefore, since no light- shielding film is formed at the region of a channel polysilicon that overlaps with the pixel electrode, a numerical aperture can be increased by that amount.</p> |
