SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To decrease the cycle time of a memory by shortening time required for amplifying operation in a sense amplifier. SOLUTION: This device is provided with a pMOS transistor 11 provided while being distributed to respective plural sense amplifiers 4-1 to 4-n for activating the corresponding sense amplifier and a pMOS transistor 12 for activating the respective sense amplifiers 4-1 to 4-n and by driving the pMOS transistor 12 with an internal drop voltage VII of a memory storage voltage after overdriving the pMOS transistor 11 with an external voltage VCC greater than the memory storage voltage, a driving ability per sense amplifier can be improved in comparison with conventional one so that the sense operation can be further accelerated in comparison with a simple overdrive system.