| 摘要 |
PURPOSE:To reduce and stabilize threshold as characteristics of InGaAlP semiconductor laser device by using II-group elements as p-type conductive dopant. CONSTITUTION:A double hetero junction consisting of an n-type InGaAlP clad layer 33, an InGaP active layer 34, and a p-type InGaAlP clad layer 35 is formed on an n-type GaAs substrate 32. When allowing the clad layer 35 to grow, two or more II-group elements are combined as dopants and are supplied simultaneously or alternately. It allows the part which was not physically possible with one element to be complemented and a p-type clad layer with a carrier concentration of 5X10<17>cm<-3> or more and a flat carrier profile to be formed by the effect obtained by using two or more elements as dopants. |
