发明名称 |
INTERNAL VOLTAGE DROPPED POWER SUPPLY CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide an internal voltage dropped power supply circuit capable of realizing an improved current supply capacity and an increased response speed. SOLUTION: In the internal voltage dropped power supply circuit provided with a differential amplifier circuit 11 for amplifying a potential difference between reference voltage VREF and internal voltage dropped power supply voltage VINT and generating output voltage VDRV, a substrate potential control voltage generation circuit 13 for generating voltage PBB on the basis of the output voltage VDRV and a MOSFET driving circuit 12 having a gate terminal and a substrate terminal and controlled by the circuits 11, 13, the drive of a load current consumed by an internal circuit 14 to be a part or all of a semiconductor integrated circuit is controlled by controlling the voltage of the gate terminal by the output voltage VDRV of the circuit 11 and controlling the voltage of the substrate terminal by the voltage PBB generated from the circuit 13.
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申请公布号 |
JP2001034349(A) |
申请公布日期 |
2001.02.09 |
申请号 |
JP19990204313 |
申请日期 |
1999.07.19 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKASHIMA SATOSHI;KIKUKAWA HIROHITO |
分类号 |
G05F1/56;(IPC1-7):G05F1/56 |
主分类号 |
G05F1/56 |
代理机构 |
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主权项 |
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地址 |
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