| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent damage to a semiconductor substrate in an etch process for forming a contact hole, by previously forming a conductive pattern in a portion of the substrate for the contact hole and by forming the contact hole after predetermined processes. CONSTITUTION: After the first interlayer dielectric(13) is formed on the semiconductor substrate(11) having a junction part(12), the junction part is opened. The conductive pattern(14) is formed on the open junction part. After various elements for forming the semiconductor device are formed, the second interlayer dielectric(15) is formed on the resultant structure including the conductive pattern. The second and first interlayer dielectrics are sequentially etched to form the contact hole(16) to which the conductive pattern on the junction part is exposed. After the exposed conductive pattern is removed, a metal interconnection(17) connected to the junction part is formed.
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