| 摘要 |
PROBLEM TO BE SOLVED: To constitute an LED by using a group III nitride semiconductor layer whose continuity and surface flatness are superior by a method wherein a frame-shaped electrode whose central part is opened is formed on an upper- part clad layer. SOLUTION: An electrode is arranged on an electrode formation layer 206 constituting the outermost surface of a laminated structure, and an LED 550 is constituted. In the electrode, a thin-film electrode 209 is first formed on the electrode formation layer 206, and a frame-shaped electrode 207 is then formed on it in such a way that a part of it comes into contact with the electrode formation layer 206 so as to have a uniform width. Lastly, pedestal electrodes 208a, 208b which are extended by crossing the frame-shaped electrode 207 are installed so as to be constituted in such a way that they come into contact with the thin-film electrode 209 partly, and that they come into contact with the electrode formation layer 206 partly. In the LED, a light emitting region covers the nearly whole face of the thin-film electrode 209, and the intensity of a light emitting operation in the light emitting region becomes nearly uniform because the thin-film electrode 209 can be electrified nearly equally by arranging the frame-shaped electrode 207 and the pedestal electrodes 208a, 208b. |
