NON-VOLATILE SEMICONDUCTOR MEMORY CELL AND METHOD FOR PRODUCING THE SAME

摘要

The invention relates to a non-volatile semiconductor memory cell, comprising a transistor component (2, 3, 6) which is located on a substrate (1) and a memory node which determines the control state of the transistor component (2, 3, 6) and which is located in the vicinity of a control gate electrode (8). The memory node has a group of vertically orientated stack structures (7), comprising at least two semiconductor layer zones (10) and an insulating layer zone (11) which lies between the latter.