发明名称 |
GROWTH OF EPITAXIAL SEMICONDUCTOR MATERIAL WITH IMPROVED CRYSTALLOGRAPHIC PROPERTIES |
摘要 |
A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, a second epitaxial semiconductor layer is grown on the first layer under conditions of relatively low temperature and high source gas flow. The first epi layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the second epi layer. Optionally, a hydrogen chloride etch may be employed during a portion of the first epi layer growth to increase the efficacy of the first layer.
|
申请公布号 |
WO0106044(A1) |
申请公布日期 |
2001.01.25 |
申请号 |
WO2000US12242 |
申请日期 |
2000.05.04 |
申请人 |
SEH AMERICA, INC. |
发明人 |
BOYDSTON, MARK, R.;DIETZE, GERALD, R.;KONONCHUK, OLEG, V. |
分类号 |
C30B25/16;C23C16/24;C30B25/02;C30B25/18;C30B29/06;H01L21/205;(IPC1-7):C30B25/16 |
主分类号 |
C30B25/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|