发明名称 |
A circuit for reading a semiconductor memory |
摘要 |
<p>A circuit for reading a semiconductor memory device comprises at least one global circuit (1) for generating a global reference signal (RIFN) for a respective plurality of cell-reading circuits (SA1-SAn) disposed locally in the memory device. The circuit comprises at least one circuit (51-5an) for replicating the reference signal (RIFN) locally in order to generate a local reference signal (MAT11-MAT1n) to be supplied to at least one respective cell-reading circuit (SA1-SAn). <IMAGE></p> |
申请公布号 |
EP1071094(A1) |
申请公布日期 |
2001.01.24 |
申请号 |
EP19990830403 |
申请日期 |
1999.06.25 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
BEDARIDA, LORENZO;DIMA, VINCENZO;BRANI, FRANCESCO;DEFENDI, MARCO |
分类号 |
G11C16/28;G11C7/14;(IPC1-7):G11C7/14 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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