METHOD FOR MANUFACTURING A FERROELECTRIC MEMORY DEVICE CAPABLE OF PREVENTING HYDROGEN DIFFUSION

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device capable of preventing hydrogen diffusion is provided to prevent a ferroelectric characteristic from being deteriorated by hydrogen diffusion, by forming an Al2O3 hydrogen diffusion blocking layer by an atomic layer deposition(ALD) method before forming an inter-metal dielectric and a passivation layer. CONSTITUTION: A capacitor composed of a storage electrode, a ferroelectric layer(21) and a plate electrode is formed on a semiconductor substrate in which a transistor is formed. The first metal line connecting the capacitor and the transistor is formed. The first Al2O3 hydrogen diffusion blocking layer(27) is formed on the entire structure. An inter-metal dielectric(28) is formed on the first Al2O3 hydrogen diffusion blocking layer.