发明名称 METHOD AND APPARATUS FOR CONTROLLING DATA INPUT OF DDR SDRAM
摘要 PURPOSE: A method and an apparatus for controlling data input of a DDR SDRAM(Double Data Rate Synchronous DRAM) are provided which prevent the generation of mis-operation in a high speed operation. CONSTITUTION: The device prevents a write data from being transferred to a global data bus during a read operation after a write operation. The apparatus includes: a data input unit(430) generating a data signal inputted from the external as a rising data signal synchronized to a rising edge of a data strobe signal and a falling data signal synchronized to a falling edge of the data strobe signal respectively; a data align unit generating a pulse signal of a clock align rising data and a clock align falling data which are aligned by synchronizing the rising data signal and the falling data signal to an external clock signal; a switching unit(470) converting the clock align rising data and the clock align falling data into the first and the second internal input pulse signal in response to a control signal; a global data bus input unit(490) transferring the first and the second internal input pulse signal to the first and the second global data bus in response to the control signal; and a control part(480) enabling or disabling the global data bus input unit in response to a read command signal and a write command signal.
申请公布号 KR20010004206(A) 申请公布日期 2001.01.15
申请号 KR19990024827 申请日期 1999.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 RYU, JE HUN;YOON, YEONG JIN
分类号 G11C11/406;(IPC1-7):G11C11/406 主分类号 G11C11/406
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