发明名称 |
METHOD AND APPARATUS FOR CONTROLLING DATA INPUT OF DDR SDRAM |
摘要 |
PURPOSE: A method and an apparatus for controlling data input of a DDR SDRAM(Double Data Rate Synchronous DRAM) are provided which prevent the generation of mis-operation in a high speed operation. CONSTITUTION: The device prevents a write data from being transferred to a global data bus during a read operation after a write operation. The apparatus includes: a data input unit(430) generating a data signal inputted from the external as a rising data signal synchronized to a rising edge of a data strobe signal and a falling data signal synchronized to a falling edge of the data strobe signal respectively; a data align unit generating a pulse signal of a clock align rising data and a clock align falling data which are aligned by synchronizing the rising data signal and the falling data signal to an external clock signal; a switching unit(470) converting the clock align rising data and the clock align falling data into the first and the second internal input pulse signal in response to a control signal; a global data bus input unit(490) transferring the first and the second internal input pulse signal to the first and the second global data bus in response to the control signal; and a control part(480) enabling or disabling the global data bus input unit in response to a read command signal and a write command signal.
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申请公布号 |
KR20010004206(A) |
申请公布日期 |
2001.01.15 |
申请号 |
KR19990024827 |
申请日期 |
1999.06.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
RYU, JE HUN;YOON, YEONG JIN |
分类号 |
G11C11/406;(IPC1-7):G11C11/406 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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