| 摘要 |
PURPOSE: A method for producing high power laser diodes is provided to prevent a current flow at a cleavage surface and to decrease an oscillation starting current so as to provide linear properties even at a low output by suppressing a catastrophic optical damage and adjusting a thickness of an active layer. CONSTITUTION: A cleavage surface is formed on the upper portion of a substrate(100) along with a primary island typed mesa(51) at a distance. The resulting whole face is formed by a current limiting layer(53), in this case the current limiting layer is composed of a gallium arsenide(GaAs), its thickness must be less than 1 micron. The current limiting layer is etched until the mesa is exposed to form a groove(54), and then resulting whole face is provided with a double hetero layer having a multilayer structure. The distance between the cleavage surface and the primary mesa is less than 20% of total resonator field.
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