| 摘要 |
PURPOSE: A semiconductor memory is provided to use a small-volume DRAM of a region where no defect is generated, if a defect is generated when testing a large-volume DRAM using the same protocol of the same package. CONSTITUTION: An address switch part(11) receives a row address and switches an address if a defect arises when testing a large-volume DRAM. A row decoder(12) decodes an output of the address switch part(11) to select a word line of a memory cell array(13). A column decoder(15) receives and decodes a column address through a column buffer(14) to select a bit line of the memory cell array(13). A sense amplifier(16) senses data at a region of the memory cell array(13) appointed by the selected word line and the selected bit line. An input/output buffer(17) performs a buffer function so that the sense amplifier and an input/output pad(18) can input and output data. The address switch part(11) comprises row buffers(BUF0-BUF9) for receiving and buffering row address bits from address pads(PAD0-PAD9) by switches(SW0-SW9), and switches(SW10-SW19) enable the row address bits to be connected between the switch(SW9) and the row buffer(BUF9).
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