| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric memory device is provided to improve a characteristic of a ferroelectric random access memory(FeRAM) device by preventing hydrogen ions generated in a cleaning process from passing through a ferroelectric layer CONSTITUTION: A capacitor consists of a storage electrode(22), a ferroelectric layer(23) and a plate electrode(24). The capacitor is formed on a substrate(20). An interlayer dielectric(25) is formed on the entire capacitor structure. The interlayer dielectric(25) is selectively eliminated by a plasma etching using an oxygen-based gas to form a contact hole(C) exposing the plate electrode while an oxide layer is formed on the plate electrode.
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