| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a reduction in selectivity of photoresist arising in a chamber performing repeatedly a dry etching process. CONSTITUTION: A dry etching process employs photoresist as an etching barrier and uses, for example, any kind of carbon fluoride gas as a source gas. As the etching process is repeated, the source gas removes gradually polymer deposited on a wall of an etching chamber as a by-product of the etching process. The polymer removed from the wall of the chamber reduces the selectivity of the photoresist. Accordingly, the etching chamber is seasoned periodically. The seasoning process begins with a loading of a bare wafer into the chamber. Next, the chamber is seasoned by using a gas accelerating the induction of the polymer. The gas for inducing a large quantity of polymer in the seasoning process includes any kind of hydrocarbon gas, or any kind of hydrocarbon fluoride gas.
|
