METHOD FOR MANUFACTURING TFT

摘要

PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) is provided to improve device property by preventing plasma damage and decreasing defects on the back channel surface. CONSTITUTION: The first metal layer is doped on an insulating substrate(10). The first metal layer is etched to form a gate(11), and a gate isolation layer(12) covers the substrate(10). After piling up an amorphous silicon layer and a doped noncrystal silicon layer on the gate isolation layer(12), a channel layer for a source/drain electrode is built on the substrate. The second metal layer and the ohmic layer(14) are etched to make a source(15A) and a drain(15B). The first thin passivation layer(16) covers the substrate(10) to protect the surface of the channel layer(13). To compensate damages on the surface of the channel layer(13), plasma treatment is carried out. The second passivation layer is built on the first passivation layer(16).