| 摘要 |
PURPOSE: A semiconductor device formed on an SOI substrate and a method for fabricating the same are to prevent occurrence of a kink effect and a body effect, thereby enhancing characteristics of the semiconductor devices. CONSTITUTION: A semiconductor device comprises: an SOI(Silicon On Insulator) substrate having orderly stacked a handling wafer(16), a buried insulting layer(15,17) and a semiconductor layer(18a) extended along a predetermined direction; the first and the second gate electrode(14,20a) disposed respectively on a front face and a rear face of the semiconductor layer, extended along a normal direction to each other, either one of the first gate electrode or the second gate electrode arranged parallel with the semiconductor layer; the first and the second gate insulating layer(13,19) for insulating the first and the second gate electrode from the semiconductor layer; and a source and drain region arranged perpendicularly to the semiconductor layer at both sides of the semiconductor layer.
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