| 摘要 |
PURPOSE: An apparatus for generating high voltage for a low-power semiconductor device is provided to reduce current consumption due to pumping for high voltage. CONSTITUTION: An apparatus for generating high voltage for a low-power semiconductor device includes a voltage level detector(100), an oscillator controller and a pumping part. Here, the voltage level detector(100) includes a high-voltage supplier(110), the first PMOS transistor(P1), the first NMOS transistor(N1), the fourth NMOS transistor(N4), the second PMOS transistor(P2) and an inverter(120). The high-voltage supplier(110) supplies high voltage(VPP) according to a burn-in test signal(burninb) and a self-refresh signal(selfrefb). The first PMOS transistor(P1) operates by a supplied voltage(Vdd) to supply the high voltage(VPP). The first NMOS transistor(N1) is serially connected to the first PMOS transistor(P1). A gate of the first NMOS transistor(N1) and a terminal of the high-voltage supplier(110) are connected together at the first node(node 1). The fourth NMOS transistor(N4) is driven by an electric potential of the first node(node 1). The second PMOS transistor(P2) is serially connected to the fourth NMOS transistor(N4) to supply the high voltage(VPP) to the second node(node 2). The inverter(120) inverts the electric potential of the second node(node 2) to output a control signal(pumpen) to the oscillator controller.
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