| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve high-speed operation characteristic and a low noise characteristic of a bipolar transistor. CONSTITUTION: An epitaxial layer(14) is formed on a semiconductor substrate(10). A field oxide layer(18) is formed by defining an active region and an inactive region on the semiconductor substrate(10). The first dopant region(20) is formed by implanting the first conductive dopant ions into the active region. The second dopant region(22) is formed by implanting the second conductive dopant ions into the active region. An emitter electrode layer and a collector electrode layer are formed by the first conductive layer pattern(26a,26b) and the second conductive layer pattern(30a,30b), respectively. A sidewall spacer(32a,32b) is formed at both sidewalls of the emitter electrode layer and the collector electrode layer. The third dopant region is formed within the second dopant region(22). A trench is formed by etching both ends of the active region. The third conductive layer pattern is formed on the field oxide layer(18). The fourth dopant region(34) is formed by performing a thermal process for the third conductive layer pattern.
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