Compact, low voltage, noise-immune RAM cell

摘要

A random access memory cell includes a forward inverter and a feedback inverter connected to the forward inverter. The feedback inverter includes a ground access transistor configured to selectively connect and isolate the feedback inverter to ground. The ground access transistor is isolated from ground in response to a first digital state global clear signal generated during a global clear state. A set of random access memory cells are simultaneously programmed to store identical values in response to the first digital state global clear signal during the global clear state. The ground access transistor is connected to ground in response to a second digital state global clear signal generated during a programming state. Selected random access memory cells are programmed to store selected values in response to the second digital state global clear signal during the programming state.