MOSFET transistor overcoming short channel effect when used in practical integrated circuits, has controlled germanium concentration gradient in sides of gate facing drain and sources regions

摘要

Germanium content in side regions (3-1, 3-2) of the gate (3), increases towards the sides of the gate facing the drain and source regions (7, 8). An Independent claim is included for the method of making the gate, in which an external layer of germanium is deposited on sides of the gate, and a cyclic heating process, causing diffusion of germanium into the gate. The layer is then removed.