Method for forming a storage node in a semiconductor memory,申请号GB19970011312-传众专利搜索

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发明名称	Method for forming a storage node in a semiconductor memory
摘要
申请公布号	GB2313709(B)	申请公布日期	2001.01.03
申请号	GB19970011312	申请日期	1997.05.30
申请人	* NEC CORPORATION	发明人	TOSHIYUKI * HIROTA
分类号	H01L27/04;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/283;H01L21/320;H01L21/824	主分类号	H01L27/04
代理机构		代理人
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