Field effect transistor has main gate formed between side gate on semiconductor substrate, and source and drain impurity area formed at both sides on side gate of semiconductor substrate

摘要

A main gate (15) is formed between the side gate (17,18) on a semiconductor substrate (11). A gate insulating film (14,16) is formed between the side gate and the main gate, the semiconductor substrate and the side gate, and the semiconductor substrate and the main gate. A source and drain impurity area (12,13) is formed at both sides on the side gate of the semiconductor substrate. An independent claim is also included for a field effect transistor manufacturing method.