发明名称 |
Method of manufacturing DRAM capacitor |
摘要 |
A method of forming trench type DRAM capacitor. An insulation layer is formed on a substrate with a trench exposing a conductive region of the substrate. A first conductive layer is formed and conformal to a surface profile of the substrate. A photoresist layer is formed over the first conductive layer to fill the trench. A three-stage of etching process is carried out. A first stage of etching step is carried out to remove a portion of the photoresist layer, thereby exposing the first conductive layer. A second stage step is carried out to remove the first conductive layer by performing an isotropic dry etching step. The first conductive layer is slightly over-etched so that a portion of the first conductive layer inside the trench is also removed. Therefore, the first conductive layer inside the trench will be at a distance lower than a top surface of the insulation layer. A third stage of etching operation is carried out to remove the remaining photoresist layer so that the remaining first conductive layer inside the trench is exposed. A dielectric layer and a second conductive layer are sequentially formed over the first conductive layer.
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申请公布号 |
US6162679(A) |
申请公布日期 |
2000.12.19 |
申请号 |
US19990306261 |
申请日期 |
1999.05.06 |
申请人 |
WORLDWIDE SEMICONDUCTOR MANUFACTURING CORP. |
发明人 |
LIN, CHINGFU |
分类号 |
H01L21/02;H01L21/3213;H01L21/8242;H01L23/485;H01L23/522;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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