发明名称 THIN-FILM THERMISTOR ELEMENT AND MANUFACTURE OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a thin-film thermistor element wherein dispersion in the resistance, etc., is suppressed for higher precision, while high-temperature durability is improved for higher reliability. SOLUTION: On a base material substrate 12 comprising alimina, a base material layer 16, a thermistor thin-film 13, and a pair of comb-like electrodes 14 and 15 comprising a Pt thin-film are formed. This thermistor thin-film 13 comprises, for example, a composite oxide of Mn-Co-Ni, having a spinel-type crystal structure which is preferentially oriented in the (100) face, that is oriented mainly in the (100) face. The base material layer 16 is formed by sputtering in argon gas atmosphere, while the thermistor thin-film 13 is formed by the sputtering in the mixed gas atmosphere comprising argon and oxygen.
申请公布号 JP2000348905(A) 申请公布日期 2000.12.15
申请号 JP19990156661 申请日期 1999.06.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJII AKIYUKI;TOMOSAWA ATSUSHI;TORII HIDEO
分类号 H01C7/04;(IPC1-7):H01C7/04 主分类号 H01C7/04
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