| 摘要 |
<p>A method for forming a valve metal oxide for semiconductor fabrication in accordance with the present invention is disclosed and claimed. The method includes the steps of providing a semiconductor wafer (100), depositing a valve metal (110) on the wafer, placing the wafer in an electrochemical cell (200) such that a solution (114) including electrolytes interacts with the valve metal to form a metal oxide (111) when a potential difference is provided between the valve metal (110) and the solution (114) and processing the wafer using the metal oxide layer.</p> |
