发明名称 |
Borderless vias with CVD barrier layer |
摘要 |
Borderless vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an undercut, etched side surface of a lower metal feature. A metal, such as tungsten, is subsequently deposited to fill the borderless via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H2/N2 plasma to lower its resistivity.
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申请公布号 |
US6159851(A) |
申请公布日期 |
2000.12.12 |
申请号 |
US19990295362 |
申请日期 |
1999.04.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHEN, ROBERT C.;GREENLAW, DAVID C.;IACOPONI, JOHN A. |
分类号 |
H01L21/285;H01L21/28;H01L21/768;H01L23/522;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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