发明名称 Electric potential shaping method for electroplating
摘要 An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.
申请公布号 US6159354(A) 申请公布日期 2000.12.12
申请号 US19970970120 申请日期 1997.11.13
申请人 NOVELLUS SYSTEMS, INC.;INTERNATIONAL BUSINESS MACHINES, INC. 发明人 CONTOLINI, ROBERT J.;REID, JONATHAN;PATTON, EVAN;FENG, JINGBIN;TAATJES, STEVE;DUKOVIC, JOHN OWEN
分类号 C25D7/12;(IPC1-7):C25D5/00;C25D7/04;C25D3/38;C25D5/20 主分类号 C25D7/12
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