DRIVE UNIT FOR ORGANIC EL ELEMENT AND ORGANIC EL DISPLAY

摘要

PROBLEM TO BE SOLVED: To perform switching of high voltage and large capacity and suppress off current by providing a switching element driving an organic EL element with LDD structure. SOLUTION: LDD(Lightly Doped Drain) structure defines a high-concentration dope region 2b in a source (or a drain) side of an active layer formed on a silicon substrate and a low-concentration dope region 2c formed between the high-concentration dope region 2b in the drain (or the source) side and a gate electrode 4. An undoped active layer region is formed right under the gate electrode 4 with the gate electrode 4 worked as a mask. A gate insulating film 3 is formed between the active layer and the gate electrode 4. The length I of the low-concentration dope region 2c in the LDD structure is set to 0.5-3μm, or desirably 1-2μm from the viewpoint of the effects of the LDD structure and the element characteristics.