Verfahren zur Herstellung einer mit Arsen dotierten glatten polykristallinen Siliziumschicht für höchstintegrierte Schaltungen,申请号DE19905010916-传众专利搜索

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发明名称	Verfahren zur Herstellung einer mit Arsen dotierten glatten polykristallinen Siliziumschicht für höchstintegrierte Schaltungen
摘要
申请公布号	DE59010916(D1)	申请公布日期	2000.11.30
申请号	DE19905010916	申请日期	1990.12.21
申请人	SIEMENS AG	发明人	WILD, DIPL.-ING.
分类号	H01L21/205;H01L21/225;H01L21/3205;H01L21/3215;H01L21/334;(IPC1-7):H01L21/225	主分类号	H01L21/205
代理机构		代理人
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地址

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