ASYMMETRICAL TRANSIST0R WITH LIGHTLY AND HEAVILY DOPED DRAIN REGIONS AND ULTRA-HEAVILY DOPED SOURCE REGION,申请号KR19997001809-传众专利搜索

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发明名称	ASYMMETRICAL TRANSIST0R WITH LIGHTLY AND HEAVILY DOPED DRAIN REGIONS AND ULTRA-HEAVILY DOPED SOURCE REGION
摘要
申请公布号	KR20000068441(A)	申请公布日期	2000.11.25
申请号	KR19997001809	申请日期	1999.03.03
申请人		发明人
分类号	H01L21/336;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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