| 摘要 |
PROBLEM TO BE SOLVED: To suppress crosstalks between elements of a semiconductor device by providing the semiconductor device with an opening formed by removing a semiconductor substrate at a portion corresponding to a device isolation insulating film for electrically isolating one element from another. SOLUTION: A portion corresponding to a device isolation insulating film 2 of a P-type MOS transistor 10, i.e., a silicon substrate 1 at a device isolation region is removed to provide an opening 1a. By providing the substrate 1 with the opening 1a, even when operating signals of the respective MOS transistors 10 and 20 leak into the substrate 1 such as shown by arrows 81 and 82, the propagation paths generating crosstalks are blocked, whereby the crosstalks between the transistors 10 and 20 through the substrate 1 can be reduced. As a result, the S/N ratio of the transistors 10 and 20 can be improved, and the mixture of unnecessary signals into the transistors 10 and 20 can be suppressed, and hence malfunction of the semiconductor device can be suppressed.
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