| 摘要 |
PURPOSE: A method for manufacturing a gallium nitride semiconductor laser is provided to reduce crack generation on a thick epitaxial layer without using an additional dry-etch process for isolation while dispersing strain by a lattice misalignment between a substrate and an epitaxial layer on the substrate. CONSTITUTION: An oxidation layer pattern is formed at regular intervals on a substrate. A first conductive clad layer(25), an active layer(27), a second conductive clad layer(29) and a cap layer are sequentially formed on the entire surface of the substrate including the oxidation layer. A ridge pattern and a mesa are formed by an etch process. Electrodes are respectively formed on the ridge pattern and the first conductive clad layer.
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