METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve a PN junction characteristic by preventing dopants injected into a cobalt silicide layer from being exhausted during an annealing process. CONSTITUTION: A gate insulating layer(12) is formed in a predetermined region on a semiconductor substrate(10). A gate electrode(13) is formed on the gate insulating layer. A sidewall spacer(14) is formed on each sidewall of the gate electrode and gate insulating layer. A silicide layer is formed on the substrate adjacent to the gate electrode and sidewall spacer. First impurity ions are firstly injected into the silicide layer. Second impurity ions are secondly injected into the silicide layer. The silicide layer is annealed to diffuse the first and second impurity ions in the silicide layer into the substrate.