| 摘要 |
PURPOSE: A sense amp of a DRAM is provided which improves the data processing rate of the DRAM by controlling and equalizing the power source of the sense amp by an external signal primarily. CONSTITUTION: A sense amp circuit of a DRAM comprises: a first NMOS transistor which applies a power source voltage to a first column line, being turned on by a first sense amp enable signal; a second NMOS transistor which applied a ground voltage to a second column line, being turned on by a second sense amp enable signal; an equalizer part(100) equalizing the first and the second column line by an equalizer signal; and a sense amp part(200) sensing and amplifying a bit line signal and a bit line bar signal. The circuit further includes: a discharge signal generation part(300) generating a discharge signal by receiving the sense amp enable signal; and a discharge part(400) accelerating the transition speed of a signal applied to the column line by the discharge signal of the discharge signal generation part during equalization. Thus, the circuit can improve the access speed of the DRAM by shortening the time to the point of enabling to perform the active operation after performing the precharge operation.
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