| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor-phase growth device that forms a thin film of uniform thickness, on an insulating body or a semiconductor substrate. SOLUTION: In a chemical vapor-phase growth device forming a thin film on a substrate, a plurality of support columns, the central axis of a substrate- support ring that is supported by the support column, the rotational axis of a ring boat 7 of quartz acting as a substrate-support mechanism, and a central axis of a reaction tube comprising an outer tube 1 and an inner tube 2 are on the same axis. The central axis of the ring boat acting as a support mechanism of a wafer, the rotational axis of the boat and the central axis of the reaction tube are identical axis. By this constitution, a gap between the ring boat and the reaction tube (inner tube) becomes uniform, so that reaction gas stream in the reaction tube is supplied uniformly to a quartz wafer at semiconductor-film formation, for improved uniformity of the thickness of a semiconductor film in a wafer surface.
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