| 摘要 |
PROBLEM TO BE SOLVED: To provide a preparation method for inexpensively preparing an oxide single crystal by using metal Ga. SOLUTION: A raw material mixture 3 comprising metal Ga and an oxide compound is mixed in a dry state. The raw material mixture 3 is treated under a fixed treatment condition and then the metal Ga in the raw material mixture 3 is wholly converted into Ga2O3 to prepare a raw material oxide 4. The raw material oxide 4 is contained in a platinum crucible 6 and melted to prepare an oxide melt 7. An oxide single crystal is grown by using the oxide melt 7.
|
