| 摘要 |
The invention relates to an electrochemical etching method for etching fine filter pores into an n- or p-doted silicon blank, the filter pores having a substantially constant pore diameter. Said blank is wired as an anode or cathode, dipped into an etching solution in which a counter-electrode is located to generate an etching current, and radiated with light, whereby minority carriers are produced in the blank. The generation rate of the minority carriers is controlled by choosing the radiation in such a manner that it decreases as the progression of the etching increases, that is with increasing pore depth.
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