发明名称 Chemical vapor deposition of titanium
摘要 A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
申请公布号 US6143362(A) 申请公布日期 2000.11.07
申请号 US19980030705 申请日期 1998.02.25
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU, GURTEJ SINGH;WESTMORELAND, DONALD L.
分类号 C23C16/02;C23C16/06;H01L21/285;H01L21/768;(IPC1-7):C23C16/455;B05D1/36;B05D3/02 主分类号 C23C16/02
代理机构 代理人
主权项
地址