发明名称 |
Chemical vapor deposition of titanium |
摘要 |
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
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申请公布号 |
US6143362(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19980030705 |
申请日期 |
1998.02.25 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU, GURTEJ SINGH;WESTMORELAND, DONALD L. |
分类号 |
C23C16/02;C23C16/06;H01L21/285;H01L21/768;(IPC1-7):C23C16/455;B05D1/36;B05D3/02 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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