| 摘要 |
PROBLEM TO BE SOLVED: To generate cracking on a deposited film of reaction by-products in a reaction furnace in a reaction forming process forcibly, discharge fine particles generated, when cracks are generated forcibly by gas purge and suppress the adhesion of the fine particles to the wafer to reduce the frequency of cleaning of the reaction chamber and improve productivity. SOLUTION: In a state where a treated substrate is unloaded from a reaction furnace in which a film is formed on the wafer, the temperature in the reaction furnace is dropped to a temperature lower than a film forming temperature, and gas purge is practiced to manufacture a semiconductor device. The temperature in the reaction furnace is dropped, and stress on the deposited film of reaction by-products adhering to the inside of the reaction furnace is increased to forcibly generate cracking on the deposition. Then, fine particles, generated when the cracks are formed, are forcibly discharged by gas purge.
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