发明名称 HEAT CONDUCTING PLATE FOR TEMPERATURE-ADJUSTING DEVICE OF SILICON WAFER
摘要 <p>PROBLEM TO BE SOLVED: To increase thermal conductivity of a face plate in the temperature- adjusting device of a silicon wafer, and to make the surface temperature uniform through reduction in elevation temperature time and reduction of temperature distribution. SOLUTION: In a heat conduction plate, that is used as the face plate of a temperature-adjusting device for heating or cooling a silicon wafer to a specific temperature, a reinforcing material 11 is cast inside a copper plate 10. The reinforcing material 11 is formed of a material with bending strength which is larger than copper, and many clearances 12a for mutually connecting the copper materials of front and back surfaces are provided inside.</p>
申请公布号 JP2000306984(A) 申请公布日期 2000.11.02
申请号 JP19990116751 申请日期 1999.04.23
申请人 SMC CORP 发明人 SUGIYAMA TAKASHI;GOTO HIROYASU
分类号 H01L21/683;H01L21/027;H01L21/304;H01L21/68;H05B3/20;(IPC1-7):H01L21/68 主分类号 H01L21/683
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