| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in operation characteristics while a gate electrode is surely formed by an embedding formation method. SOLUTION: Over the entire surface of a semiconductor substrate 11, a substrate protective film 13 which, for example, comprises HDP-NSG of film- thickness 50 nm with an etching selectivity to a silicon, and a first mask film 14 comprising BPSG of film-thickness 200 nm, are sequentially deposited. An opening part 14a with opening width 0.13μm is formed in the gate formation region on the substrate protective film 13 and the first mask film 14. A gate insulating film 15A of film-thickness 2.5 nm is formed at a part exposed to the opening part 14a, a gate electrode formation film 16A comprising non-doped polysilicon of film-thickness 300 nm is so deposited as to fill the opening part 14a, and then the first mask film 14 is flattened by a CMP method. |
