发明名称 |
Apparatus and method for static random access memory array |
摘要 |
A static random access memory array (200) with power supplies and an array biasing scheme is disclosed. A power supply (202) has an output voltage that is applied to the bitlines (40). The output voltage pre-charges the bitlines (40) to read from the memory cells (10). An array power supply (204) has an array voltage that is applied to the memory cells. The array voltage is higher than the output voltage. The array power supply (204) is drived by boosting the output voltage of the power supply (202).
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申请公布号 |
US6141240(A) |
申请公布日期 |
2000.10.31 |
申请号 |
US19990395803 |
申请日期 |
1999.09.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MADAN, SUDHIR K.;STRONG, BOB D. |
分类号 |
G11C11/417;G11C11/418;G11C11/419;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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